資料來源:
三民書局
Modeling and characterization of RF and microwave power FETs / Peter H. Aaen, Jaime A. Pla, John Wood
- 作者： Aaen, Peter
- 其他作者：
- 其他題名：
- The Cambridge RF and microwave engineering series
- 出版： Cambridge : Cambridge University Press 2007
- 叢書名： The Cambridge RF and microwave engineering series
- 主題： Field-effect transistors--Mathematical models , Radio frequency oscillators
- ISBN： 9780521870665 (hbk.) :: NT$3049.00 、 0521870666 (hbk.)
- 書目註：Includes bibliographical references and index
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讀者標籤：
- 系統號： 005121434 | 機讀編目格式
館藏資訊
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.