(HfVTiZrW)B2高熵合金硼化物薄膜之性能研究 = Research on the properties of (HfVTiZrW)B2 high entropy alloy boride films / 王俊興.
- 作者: 王俊興
- 其他題名:
- Research on the properties of (HfVTiZrW)B2 high entropy alloy boride films
- 主題: (HfVTiZrW)B2 高熵合金硼化物薄膜 二硼化物材料 高功率脈衝磁控濺鍍 高硬度薄膜. , (HfVTiZrW)B2 High entropy alloy boride film Diboride material High power pulse magnetron sputtering High hardness film.
- URL:
電子資源
- 一般註:指導教授: 李志偉. 學年度: 113.
- 書目註:參考書目: 葉.
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讀者標籤:
- 系統號: 005185043 | 機讀編目格式
館藏資訊
摘要註
近年來,高熵合金硼化物(High Entropy Alloy Borides, HEA Borides)憑藉其優異的機械與物理性能,受到全球工業界、學術界及研究人員的高度關注。本研究針對(HfVTiZrW)B₂高熵合金硼化物薄膜,系統性探討了不同沉積溫度及沉積電源對薄膜性質的影響。首先,利用高功率脈衝磁控濺射系統(High power impulse magnetron sputtering, HiPIMS)在基板溫度分別為200℃、300℃、400℃及500℃條件下,製備四批薄膜,而基板包括P型單晶(100)矽晶片、304不銹鋼和420不銹鋼,並分析其微觀結構、晶相變化、機械性能及抗腐蝕能力。結果顯示,隨著沉積溫度提升,有效促進原子表面遷移與有序成核,使薄膜結晶度及晶粒尺寸明顯增大,柱狀晶寬度增加,薄膜呈現六方最密堆積(HCP)結構,且在500℃沉積時達到最高硬度38.0 GPa與優異的耐磨性能。此外,高溫沉積的薄膜顯著提升薄膜的抗腐蝕能力,其腐蝕阻抗達304不銹鋼的38.89倍。接著,本研究選擇最佳沉積溫度條件,分別以直流(DC)、射頻(RF)及中頻(MF)電源進行薄膜沉積,綜合比較不同電源對薄膜結構與性能的影響。結果指出,不同電源的沉積方式對薄膜的緻密度、晶粒尺寸、硬度及耐腐蝕性均有顯著影響,為高熵合金硼化物薄膜在工業應用中提供了多樣化的製備策略與優化方向。 因此本研究透過調控沉積溫度與電源類型,調控(HfVTiZrW)B2高熵合金硼化物薄膜的機械與化學性質,展現其作為切削工具及成型模具保護性鍍膜的廣泛應用潛力。. In recent years, high entropy alloy borides (HEA borides) have attracted significant attention from industry, academia, and researchers worldwide due to their outstanding mechanical and physical properties. This study systematically investigates the effects of deposition temperature and power source on the properties of (HfVTiZrW)B₂ high entropy alloy boride thin films. Four batches of films were deposited using a High power impulse magnetron sputtering (HiPIMS) system at substrate temperatures of 200 °C, 300 °C, 400 °C, and 500 °C, respectively. The substrate include p-type monocrystalline (100) silicon wafers, 304 stainless steel, and 420 stainless steels. Their microstructure, phase evolution, mechanical properties, and corrosion resistance were thoroughly analyzed. The results indicate that increasing the deposition temperature effectively promotes surface atomic diffusion and orderly nucleation, leading to a significant enhancement in crystallinity and grain size. The columnar crystal width increases, and the films exhibit a hexagonal close-packed (HCP) structure. Notably, at a deposition temperature of 500 °C, the film achieves the highest hardness of 38.0 GPa and demonstrates excellent wear resistance. Moreover, films deposited at elevated temperatures showed significantly improved corrosion resistance, with the corrosion impedance reaching up to 38.89 times that of 304 stainless steel. Subsequently, under the optimal deposition temperature, films were deposited using direct current (DC), radio frequency (RF), and mid-frequency (MF) power sources to comprehensively evaluate the influence of power mode on film structure and properties. The results reveal that the deposition method significantly affects the film's density, grain size, hardness, and corrosion resistance, providing diversified fabrication strategies and optimization pathways for HEA boride thin films in industrial applications. This study demonstrates that by tuning deposit